sot-323 plastic-encapsulate transistors MMST2222A transistor ( npn ) features y epitaxial planar die construction y complementary pnp type available(mmst2907a) marking: k3p maximum ratings (t a = 25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector dissipation 200 mw t j junction temperature 150 t stg storage temperature -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c = 10 a, i e =0 75 v collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =70 v, i e =0 100 na collector cut-off current i ceo v ce =35v , i b =0 100 na emitter cut-off current i ebo v eb = 3v , i c =0 100 na h fe(1) v ce =10v, i c =0.1ma 35 h fe(2) v ce =10v, i c = 1ma 50 h fe(3) v ce =10v, i c = 10ma 75 h fe(4) v ce =10v, i c = 150ma 100 300 h fe(5) v ce =10v, i c = 500ma 40 dc current gain h fe(6) v ce =1v, i c = 150ma 35 collector-emitter saturation voltage v ce (sat) i c =500 ma, i b = 50ma i c =150 ma, i b =15ma 1 0.3 v base-emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma i c =150 ma, i b =15ma 2.0 1.2 v transition frequency f t v ce =20v, i c = 20ma f=100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0,f=1mhz 8 pf delay time t d 10 n s rise time t r v cc =30v, v be(off) =-0.5v i c =150ma , i b1 = 15ma 25 n s storage time t s 225 n s fall time t f v cc =30v, i c =150ma i b1 =-i b2 =15ma 60 n s sot-323 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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